jiangsu changjiang electronics technology co., ltd sod-123 plastic-encapsulate diodes b0520lw/B0530W/b0540w schottky barrier diode + features z low forward voltage drop z guard ring construction for transi ent protection z high conductance - z also available in lead free version marking: b0520lw:sd B0530W: se b0540w: sf maximum ratings @ta =25 parameter symbol b0520lw B0530W b0540w unit peak repetitive peak reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 v rms reverse voltage reverse voltage v r(rms) 14 21 28 v average rectified output current i o 0.5 a forward current surge peak i fsm 5.5 a power dissipation p d 500 mw thermal resistance junction to ambient r ja 200 /w junction temperature t j 125 storage temperature t stg -5 5~+150 voltage rate of change dv/dt 1000 v/ s electrical characteristics @ta =25 parameter symbol b0520lw B0530W b0540w unit conditions 20 -- -- i r =250 a -- 30 -- i r =200 a minimum reverse b reakdown voltage v (br) -- -- 40 v i r =20 a v f1 0.330 0.375 -- i f =0.1a v f2 0.385 0.430 0.510 i f =0.5a forward voltage v f3 -- -- 0.62 v i f =1a i r1 75 -- -- v r =10v reverse current i r2 -- 20 -- a v r =15v i r3 250 -- 10 v r =20v i r4 -- 130 -- v r =30v reverse current i r5 -- -- 20 a v r =40v capacitance between terminals c t -- -- 170 pf v r =0,f=1mhz sod-123 c,jul,2012
0.1 1 10 100 10 100 1000 0 25 50 75 100 125 150 0 100 200 300 400 500 600 0 100 200 300 400 500 600 0.01 0.1 1 0 5 10 15 20 25 30 1e-3 0.01 0.1 1 10 t a =25 f=1mhz capacitance characteristics reverse voltage v r (v) capacitance between terminals c t (pf) power derating curve power dissipation p d (mw) ambient temperature t a ( ) forward characteristics t a = 1 0 0 o c t a = 2 5 o c forward current i f (a) forward voltage v f (mv) reverse characteristics b0520lw typical characteristics t a =100 o c t a =25 o c reverse current i r (ma) reverse voltage v r (v) c,jul,2012
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